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data sheet 1 of 11 rev. 04, 2007-08-01 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! ptf041501e PTF041501F description the ptf041501e and PTF041501F are thermally-enhanced, 150- watt, internally-matched goldmo s ? fets intended for ultra-linear cdma applications. they are characterized for cdma and cdma2000 operation from 450 to 470 mhz. thermally-enhanced packaging provides the coolest operation available. full gold metallization ensures excellent device lifetime and reliability. ptf041501e package h-30260-2 thermally-enhanced high power rf ldmos fets 150 w, 450 ? 500 mhz cdma is-95 performance v dd = 28 v, i dq = 900 ma, f = 470 mhz 5 10 15 20 25 30 35 40 36 37 38 39 40 41 42 43 44 45 46 47 output power (dbm), avg. drain efficiency (%) -70 -60 -50 -40 -30 -20 -10 0 adjacent channel power ratio (dbc) acp f c ? 0.75 mhz acpr f c + 1.98 mhz efficiency rf characteristics 3-carrier cdma2000 measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 900 ma, p out = 60 w average, f = 470 mhz characteristic symbol min typ max unit gain g ps ? 21 ? db drain efficiency h d ? 42 ? % adjacent channel power ratio acpr ? ?45 ? db PTF041501F package h-31260-2 features ? thermally-enhanced packages ? broadband internal matching ? typical cdma performance at 470 mhz, 28 v - average output power = 32 w - linear gain = 21 db - efficiency = 31% ? typical cw performance, 470 mhz, 28 v - output power at p?1db = 165 w - efficiency = 61% ? integrated esd protection: human body model, class 1 (minimum) ? excellent thermal stability ? low hci drift ? capable of handling 5:1 vswr @ 28 v, 150?w?(cw) output power
ptf041501e PTF041501F data sheet 2 of 11 rev. 04, 2007-08-01 rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 900 ma, p out = 150 w pep, f = 470 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 20.0 21 ? db drain efficiency h d 45 46 ? % intermodulation distortion imd ? ?30 ?29 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 a v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.07 ? w operating gate voltage v ds = 28 v, i dq = 900 ma v gs 2 2.9 4 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 625 w above 25c derate by 3.57 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 150 w cw) r q jc 0.28 c/w ordering information type package outline package description marking ptf041501e h-30260-2 thermally-enhanced slotted flange, single-ended ptf041501e PTF041501F h-31260-2 thermally-enhanced earless flange, single-ended PTF041501F
ptf041501e PTF041501F data sheet 3 of 11 rev. 04, 2007-08-01 18 19 20 21 22 23 450 455 460 465 470 frequency (mhz) gain (db) 45 50 55 60 65 efficiency (%), p out (dbm) output power efficiency gain p out , gain & efficiency (at p-1db) vs. frequency v dd = 28 v, i dq = 900 ma im3 vs. output power at selected biases v dd = 28 v, f 1 = 469, f 2 = 470 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 36 38 40 42 44 46 48 50 output power (dbm), avg. imd (dbc) 675 ma 1125 ma 900 ma typical performance (data taken in a production test fixture) power sweep v dd = 28 v, f = 470 mhz 16 17 18 19 20 21 22 23 39 41 43 45 47 49 51 53 55 output power (dbm) power gain (db) i dq = 675 ma i dq = 1125 ma i dq = 900 ma broadband circuit performance v dd = 28 v, i dq = 900 ma, p out avg.. = 48.75 dbm 0 10 20 30 40 50 445 450 455 460 465 470 475 frequency (mhz) gain (db), efficiency (%) -20 -10 0 10 20 30 return loss (db) gain return loss efficiency
ptf041501e PTF041501F data sheet 4 of 11 rev. 04, 2007-08-01 intermodulation distortion vs. p out (in a broadband circuit) v dd = 28 v, i dq = 900 ma, f 1 = 469 mhz, f 2 = 470 mhz -70 -60 -50 -40 -30 -20 -10 0 36 38 40 42 44 46 48 50 output power (dbm), avg. imd (dbc) 3rd order 7th 5th three-carrier cdma 2000 performance v dd = 28 v, i dq = 900 ma, f = 470 mhz 0 10 20 30 40 50 36 38 40 42 44 46 48 50 output power (dbm), avg. drain efficiency (%) -60 -55 -50 -45 -40 -35 adj. ch. power ratio (dbc) acp low acp up alt up efficiency output power (at 1 db compression) vs. supply voltage i dq = 900 ma, f = 470 mhz 50 51 52 53 54 55 24 26 28 30 32 supply voltage (v) output power (dbm) gain & efficiency vs. output power v dd = 28 v, i dq = 900 ma, f = 470 mhz 16 17 18 19 20 21 22 23 39 41 43 45 47 49 51 53 55 output power (dbm) gain (db) 0 10 20 30 40 50 60 70 80 drain efficiency (%) efficiency gain typical performance (cont.)
ptf041501e PTF041501F data sheet 5 of 11 rev. 04, 2007-08-01 broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 450 1.07 ?3.15 1.18 0.96 455 1.03 ?3.04 1.21 1.03 460 1.02 ?2.89 1.24 1.17 465 1.01 ?2.80 1.28 1.25 470 0.99 ?2.67 1.26 1.36 0.1 0.2 0 . 1 0 . 1 - w a v e l e n g t h s t o w a r d g e n < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 z load z source 450 mhz 450 mhz 470 mhz 470 mhz z 0 = 50 w bias voltage vs. temperature voltage normalized to typical gate voltage, series show current. 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (oc) normalized bias voltage 2.25 a 4.50 a 6.75 a 9.00 a 11.25 a 13.50 a typical performance (cont.)
ptf041501e PTF041501F data sheet 6 of 11 rev. 04, 2007-08-01 reference circuit reference circuit schematic for f = 460 mhz circuit assembly information dut ptf041501e or PTF041501F ldmos transistor pcb 0.76 mm [.030"] thick, e r = 9.2 rogers tmm10 2 oz. copper microstrip electrical characteristics at 460 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.016 l , 50.0 w 4.32 x 0.71 0.170 x 0.028 l 2 0.033 l , 24.0 w 8.13 x 2.54 0.320 x 0.100 l 3 0.025 l , 24.0 w 6.10 x 2.54 0.240 x 0.100 l 4 0.097 l , 4.8 w 21.59 x 17.78 0.850 x 0.700 l 5 0.081 l , 50.0 w 21.59 x 0.71 0.850 x 0.028 l 6 0.040 l , 4.8 w 8.89 x 17.78 0.350 x 0.700 l 7 0.158 l , 38.0 w 40.64 x 1.27 1.600 x 0.050 l 8 0.030 l , 10.9 w 5.59 x 7.11 0.220 x 0.280 l 9 0.158 l , 38.0 w 40.64 x 1.27 1.600 x 0.050 l 10 0.030 l , 10.9 w 5.59 x 7.11 0.220 x 0.280 l 11 0.025 l , 5.6 w 5.59 x 15.24 0.220 x 0.600 l 12 0.105 l , 5.6 w 23.62 x 15.24 0.930 x 0.600 l 13 0.006 l , 5.6 w 1.27 x 15.24 0.050 x 0.600 l 14 0.104 l , 21.3 w 25.40 x 3.05 1.000 x 0.120 l 15 0.014 l , 50.0 w 3.81 x 0.71 0.150 x 0.028 1 electrical characteristics are rounded. rf_in rf_out 041501ef_sch r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r2 1.3k v r1 1.2k v lm7805 c1 0.001f v dd qq1 q1 r5 3.3k v 100pf 1f 10f 50v 100pf 100pf 5.1pf 5.6pf 2.1pf 100pf 1f 10f v dd l 1 l 3 l 7 l 9 dut c10 c11 c12 c15 c16 c8 c19 c23 c22 c21 50v l 5 l 2 0.1f c5 r6 10f 35v c4 5.1k v r7 120pf c6 c7 10 v c9 4.3pf l 4 l 6 50v 0.1f 50v c13 c14 10f l1 50v 0.1f 50v c24 c25 10f l2 l 8 l 10 11pf c17 11pf c18 c20 8.2pf l 11 l 12 l 13 l 14 l 15
ptf041501e PTF041501F data sheet 7 of 11 rev. 04, 2007-08-01 reference circuit (cont.) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key pcs6106tr-nd c5, c13, c24 capacitor, 0.1 f digi-key p4525-nd c6 ceramic capacitor, 120 pf atc 100b 121 c7, c10, c19, ceramic capacitor, 100 pf atc 100b 101 c21 c8 ceramic capacitor, 2.1 pf atc 100b 2r1 c9 ceramic capacitor, 4.3 pf atc 100b 4r3 c11, c22 capacitor, 1.0 f atc 920c105 c12, c14, c23, capacitor, 10 f, 50 v garrett electronics tps106k050r0400 c25 c15 ceramic capacitor, 5.6 pf atc 100b 5r6 c16 ceramic capacitor, 5.1 pf atc 100b 5r1 c17, c18 ceramic capacitor, 11 pf atc 100b 110 c20 ceramic capacitor, 8.2 pf atc 100b 8r2 l1, l2 ferrite, 6 mm ferroxcube 53/3/4.6-452 q1 transistor infineon bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor, 2 k-ohms digi-key p2.0kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5 chip resistor, 3.3 k-ohms digi-key p3.3kect-nd r6 chip resistor, 10 ohms digi-key p10ect-nd r7 chip resistor, 5.1 k-ohms digi-key p5.1kect-nd
ptf041501e PTF041501F data sheet 8 of 11 rev. 04, 2007-08-01 041501ef_assy v dd v dd v dd rf_in rf_out lm 10 35v + reference circuit (cont.) *gerber files for this circuit available on request reference circuit assembly diagram* (not to scale)
ptf041501e PTF041501F data sheet 9 of 11 rev. 04, 2007-08-01 package outline specifications package h-30260-2 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 260-cases_30260 0.0381 [.0015] -a- 22.350.23 [.880.009] (2x 4.830.50 [.190.020]) 2x 12.70 [.500] 23.370.51 [.920.020] 4x r 1.52 [.060] 2x 3.25 [.128] 1.02 [.040] 27.94 [1.100] 34.04 [1.340] d s g flange 13.72 [.540] 45 x (2.03 [.080]) sph 1.57 [.062] 2x 1.63 [.064] r 4.110.38 [.162.015] [.520 ] +.004 ?.006 lid 13.21 +0.10 ?0.15
ptf041501e PTF041501F data sheet 10 of 11 rev. 04, 2007-08-01 package outline specifications (cont.) package h-31260-2 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 260-cases_31260 sph 1.57 [.062] 1.02 [.040] 23.370.51 [.920.020] 2x 12.70 [.500] 45 x 2.031 [.080] d g s -a- 4.110.38 [.162.015] lid 22.350.23 [.880.009] flange 23.11 [.910] 13.72 [.540] 2x 4.830.50 [.190.020] [.520 +.004 ] ?.006 . lid 13.21 +0.10 ?0.15 0.0381 [.0015] 4x r 0.51 [r.020] max
data sheet 11 of 11 rev. 04, 2007-08-01 ptf041501e/f confidential, limited internal distribution revision history: 2007-08-01 data sheet previous version: 2005-04-15, data sheet page subjects (major changes since last revision) 6 corrected circuit information all updated company information goldmos ? is a registered trademark of infineon technologies ag. edition 2007-08-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2005. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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